Phys 222: Basic Electronics Question Paper

Phys 222: Basic Electronics

Institution: Egerton University question papers

Exam Year:2016

QUESTION ONE
(a) Differentiate between aluminium rod, plastic rod and germanium crystals as regards to:
i) The number of free electrons present at room temperature
ii) electrical conductivity and classification based on energy band theory
iii) the number of valence electrons and the forbidden gap
(b)(i) compare an intrinsic and p type semiconductor in terms of the type of charge carriers
(ii) differentiate between drift current and diffusion current
(c) Explain the effect of raising the temperature from 0K, 300K to 400K on the conduction of the;
i. intrinsic semiconductor
ii. N-type extrinsic semiconductor
(d) Explain with a neat graph the variation of current with voltage across the silicon diode and describe the main features of the graph
(e)(i) define Hall Effect
(ii) explain how Hall Effect can be used to determine whether a semiconductor is N-type or P-type
(f) State three differences between avalanche and zener breakdown
(g) Describe using appropriate diagrams how rectification is achieved using:
(i) half wave rectifier
(ii) full wave rectifier
(h) State the differences between bipolar junction transistor and field effect transistor

QUESTION TWO
(a) Differentiate between a donor and acceptor impurity atoms and give two examples in each
(b) Describe how P-type and N-type semiconductors are formed

QUESTION THREE
(a) Describe how a p-n junction is formed
(b) Explain what happens to p-n junction under the following:
(i) reverse biased
(ii) forward biased

QUESTION FOUR
(a) Draw circuits of common base, common emitter and common collector configurations for pnp transistors and indicate the direction of currents.
(b) State the current amplification for each of the configurations in (a) above
(c) Derive the relationship between the amplification for common base and common emitter

Phys 222: Basic Electronics Question Paper

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